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The 2N7002KHE3-TP is an N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Trench MV technology and is housed in a SOT-23 package. The device features a drain-source voltage rating of 60V, a continuous drain current of 300mA at 25°C, and a maximum power dissipation of 350mW. It is AEC-Q101 qualified and offers ESD protection up to 2kV (HBM). Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V and a typical on-resistance of 2.5Ω at VGS=10V and ID=300mA.
Verify the component against official MCC datasheets to confirm authenticity. Purchase only from authorized distributors or directly from Micro Commercial Components to ensure traceability and quality. Counterfeit parts pose significant risks; unauthorized sources do not provide warranty coverage. Confirm the specific ordering suffix matches the required packaging and compliance specifications before finalizing procurement.
Select this component for applications requiring an N-channel MOSFET with AEC-Q101 qualification. Ensure the operating junction temperature remains within -55°C to +150°C. Verify that the thermal resistance of 357°C/W is adequate for the specific ambient conditions and power dissipation requirements. Confirm compatibility with the SOT-23 footprint during PCB layout design.
This part belongs to the 2N7002 series of N-channel MOSFETs produced by Micro Commercial Components. It is designed as a surface-mount device suitable for automated assembly processes. The product line emphasizes low input capacitance and fast switching speeds, making it appropriate for various discrete transistor and power FET applications in consumer and industrial electronics.
Cross-reference with other 2N7002 variants from different manufacturers if pinout and electrical characteristics match. Verify package dimensions and thermal properties before substitution. Ensure any replacement also meets AEC-Q101 requirements if used in automotive contexts.