2N7002KQ-7

$0.13

Description：2N7002 FAMILY SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e98bfb95c776 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002KQ-7

Overview

The 2N7002KQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and continuous drain currents of 380mA at VGS=10V and 310mA at VGS=5V. The device offers low on-resistance, with maximum values of 2Ω at 10V gate drive and 3Ω at 5V gate drive. It operates within a temperature range of -55°C to +150°C and is housed in a compact SOT-23 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
ESD protected up to 2kV
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Motor control
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required carrier quantity before procurement. Confirm that the component meets the necessary IATF 16949 manufacturing facility requirements if strict automotive change control protocols are mandated by the design specification.

Selection Notes

Select this component when automotive qualification and high reliability are required. Ensure the application logic levels align with the specified RDS(ON) thresholds at 5V or 10V gate-source voltages. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet for steady-state and transient conditions.

Part Context

This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive industry standards, distinguishing it from standard commercial variants through its AEC-Q101 qualification and PPAP support.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(ON), while ensuring the replacement also satisfies automotive qualification requirements if applicable.

FAQ

Is the 2N7002KQ suitable for automotive applications?

Yes, the 2N7002KQ is qualified to AEC-Q101, supported by a PPAP, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.