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Product Detailed Parameters
- Description：SOT-523, MOSFET
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：35 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523 Flat Leads
- Package / Case：SC-89, SOT-490
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Overview
The 2N7002KTB is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-523 package. It features an advanced trench process and high-density cell design for low on-resistance. Key electrical parameters include a drain-source breakdown voltage of 60V, continuous drain current of 115mA, and pulsed drain current of 800mA. The device has a maximum power dissipation of 200mW at 25°C and operates within a junction temperature range of -55°C to +150°C. Gate threshold voltage is typically 2.5V, with a total gate charge of 0.8nC.
Feature Summary
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- ESD Protected 2KV HBM
Applications
- Battery Operated Systems
- Solid-State Relays Drivers
- Relays, Displays, Lamps, Solenoids, Memories
Procurement Notes
Verify the specific ordering suffix R1_00001 against official Panjit documentation to confirm packaging details. The datasheet indicates standard packing as Tape and Reel (T/R) with 4000 units per 7-inch plastic reel. Ensure compliance with EU RoHS 2.0 directives and IEC 61249 standard green molding compound requirements during procurement.
Selection Notes
Select this component for applications requiring a compact SOT-523 footprint with ESD protection capabilities. The device is suitable for battery-operated systems due to its very low leakage current in the off condition. Consider the 115mA continuous current limit and 200mW power dissipation when designing thermal management solutions for surface-mounted implementations.
Part Context
This part belongs to the 2N7002 series of N-Channel Enhancement Mode MOSFETs produced by Panjit. While sharing the base model number with other variants like the 2N7002KW or 2N7002KT3G, the KTB designation specifically denotes the SOT-523 package configuration. This distinguishes it from SOT-23 or SOT-323 versions which may have different physical dimensions and thermal characteristics.
Replacement Considerations
Direct substitutes include other 60V N-Channel MOSFETs in SOT-523 packages such as the DMN61D9U-7. Verify pinout compatibility and ensure that replacement devices meet the required 115mA continuous current and 60V breakdown voltage specifications.
