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The 2N7002KX-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 380 mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 Ω at Vgs = 10 V and Id = 500 mA, with a gate threshold voltage (Vgs(th)) of 2.5 V max at Id = 1 mA. Total gate charge (Qg) is 0.3 nC max at Vgs = 4.5 V. Power dissipation is rated at 370 mW at Ta = 25°C. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23-3 package.
Verify the specific suffix 'KX' against official Diodes Incorporated documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure the ordering part number matches the required package variant and manufacturing date code requirements for your assembly process.
Select this component when a compact SOT-23 footprint is required for N-channel switching. Consider the 2 Ω Rds(on) limit for power loss calculations at higher currents. Verify that the 60 V breakdown voltage exceeds the circuit's peak transient voltages.
This part belongs to the 2N7002 family of single N-channel MOSFETs. While sharing the core die architecture with variants like 2N7002K, the KX suffix denotes specific packaging or testing configurations defined by the manufacturer. It serves as a general-purpose switch in portable electronics and battery-powered devices.
Direct substitutes include other 2N7002 variants from different manufacturers such as Vishay or Infineon, provided they meet the 60 V / 380 mA / SOT-23 criteria. Cross-reference datasheets for Rds(on) and Qg values to ensure equivalent switching performance.