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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23-PO
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Infineon Technologies 2N7002L6327HTSA1 is an N-channel enhancement mode MOSFET in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V, continuous drain current of 0.3 A at 25 °C, and maximum on-state resistance of 3 Ω at VGS=10 V. The device supports a gate-source voltage of ±20 V, operates within -55 to +150 °C, and dissipates up to 0.5 W. It includes avalanche rating capability with single pulse energy of 1.3 mJ.
Feature Summary
- Logic level operation for direct interface with standard logic circuits
- Avalanche rated design for robustness against transient voltage events
- Fast switching characteristics suitable for high-frequency applications
Applications
- Load switching in digital control circuits
- Small-signal amplification stages
- General-purpose low-power switching applications
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 matches the required tape and reel quantity of 3000 pieces per reel. Confirm that the PG-SOT-23 footprint aligns with the target PCB layout. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet documentation.
Selection Notes
Select this component when a compact N-channel solution with 60 V blocking capability is required. The logic level threshold allows efficient drive from 3.3 V or 5 V logic sources. Consider the thermal resistance of 250 K/W for heat dissipation calculations in free-air conditions without additional copper area.
Part Context
This part belongs to the OptiMOS™ small-signal transistor family designed for general-purpose switching. It utilizes silicon technology optimized for low gate charge and fast transition times. The device integrates a body diode with defined reverse recovery characteristics for synchronous rectification or freewheeling duties.
Replacement Considerations
Cross-reference with other 2N7002 variants from different manufacturers ensuring identical pinout and electrical limits. Verify that replacement parts maintain the same PG-SOT-23 package dimensions and thermal performance metrics.
