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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002LT1G is a small signal N-channel MOSFET housed in an SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 115 mA at 25°C. The device exhibits a maximum static drain-source on-state resistance of 7.5 Ω at VGS = 10 V and ID = 500 mA, with a gate threshold voltage ranging from 1.0 V to 2.5 V. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board at 25°C ambient temperature.
Feature Summary
- Enhancement mode N-channel silicon MOSFET technology designed for low-voltage switching applications
- AEC-Q101 qualified and PPAP capable for automotive and high-reliability environments
- Pb-free, halogen-free, and BFR-free construction compliant with RoHS standards
Applications
- Logic level conversion between mixed-voltage systems
- Small-signal switching and load control circuits
- Battery protection and management circuitry
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and tape-and-reel specifications. Ensure that the selected variant meets the required environmental compliance standards and automotive qualification levels if applicable to the target design.
Selection Notes
Select this component for designs requiring a compact N-channel switch with a 60 V drain-source voltage capability. Consider the 7.5 Ω maximum on-resistance and 115 mA continuous current limits when sizing the thermal management strategy for the intended operating conditions.
Part Context
This part belongs to the 2N7002L family of small signal MOSFETs manufactured by onsemi. It utilizes the standard SOT-23 (CASE 318) three-pin outline, providing a cost-effective and space-efficient solution for general-purpose switching tasks in consumer electronics and industrial control modules.
Replacement Considerations
The 2V7002LT1G serves as a verified automotive-grade substitute within the same product family, offering identical electrical performance while meeting additional site and control change requirements.
