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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002LT3 is an N-channel small signal MOSFET housed in a SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 115 mA at 25°C, with a maximum static drain-source on-state resistance of 7.5 Ohms at VGS = 10 V and ID = 500 mA. The device operates within a junction temperature range of -55°C to +150°C and offers a total power dissipation of up to 300 mW on an alumina substrate.
Feature Summary
- AEC Qualified and PPAP Capable for automotive reliability standards
- Enhancement mode N-channel design optimized for low-voltage switching applications
- Lead-free packaging available compliant with environmental directives
Applications
- Battery management systems
- Power management circuits
- Load switches
- High-side and low-side driver applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets AEC-Q100 qualification requirements if intended for automotive use. Ensure thermal derating calculations align with the specified FR-5 or alumina substrate conditions during integration.
Selection Notes
Select this component when a compact N-channel enhancement-mode MOSFET is required for low-current switching tasks. The 7.5 Ohm on-resistance makes it suitable for general-purpose signal switching rather than high-power conduction. Verify gate threshold voltage compatibility with the driving logic levels to ensure reliable turn-on characteristics.
Part Context
This part belongs to the 2N7002L series of small signal MOSFETs manufactured by onsemi. It utilizes silicon technology and is designed for surface-mount assembly. The device serves as a standard solution for discrete switching needs in consumer electronics and industrial control boards where space constraints are critical.
Replacement Considerations
Cross-reference with other 2N7002 variants from different manufacturers, ensuring pinout compatibility and matching electrical ratings such as V(BR)DSS and RDS(on). Verify that alternative packages maintain the same thermal performance and footprint dimensions.
