2N7002LT3G

$0.17

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dd2582600cac Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002LT3G

Overview

The onsemi 2N7002LT3G is a single N-channel small signal MOSFET housed in an SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 115 mA at 25°C. The device exhibits a maximum static drain-source on-state resistance of 7.5 Ohms at a gate-source voltage of 10 V and a drain current of 500 mA. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W.

Feature Summary

Voltage-controlled enhancement mode operation for efficient switching applications
High-density cell design utilizing DMOS technology to minimize on-state resistance
Pb-free, halogen-free, and BFR-free construction compliant with RoHS standards

Applications

Low voltage and low current power switching circuits
Small servo motor control systems
Power MOSFET gate driver stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantities and tape-and-reel specifications. Confirm that the component meets all required automotive or industrial qualification standards if applicable to the target system environment.

Selection Notes

Select this component for applications requiring a compact N-channel switch with a 60 V voltage rating. Ensure the circuit design accommodates the specified 115 mA continuous current limit and the thermal constraints associated with the SOT-23 package dissipation capabilities.

Part Context

This part belongs to the 2N7002L series manufactured by onsemi. It utilizes silicon technology and is designed for general-purpose small-signal switching. The device is available in a standard SOT-23 footprint, providing a cost-effective solution for space-constrained electronic designs.