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Product Detailed Parameters
- Description：MOSFET N-CH 60V 190MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta), 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.43 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：265mW (Ta), 1.33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Nexperia 2N7002NXAK is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a TO-236AB (SOT23) surface-mounted package. The device supports a drain-source voltage of 60 V and a gate-source voltage range of -20 V to +20 V. At 25 °C, the continuous drain current reaches 300 mA at the solder point and 190 mA in ambient conditions. The maximum on-state resistance is 4.5 Ω at VGS = 10 V and ID = 100 mA. Total power dissipation is rated at 325 mW in free air and 1330 mW at the solder point.
Feature Summary
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated electrostatic discharge protection
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration and manufacturing site codes. Ensure that the selected variant matches the required thermal and electrical specifications for the intended application environment. Cross-reference the component marking code with the datasheet to validate authenticity and production batch details before integration into designs.
Selection Notes
Select this component for applications requiring compact SMD footprints with moderate current handling capabilities. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat dissipation. Confirm that the operating junction temperature remains within the specified limits during peak load conditions to ensure long-term reliability and stable switching performance.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode MOSFETs manufactured by Nexperia USA Inc. It represents a standard discrete semiconductor solution designed for general-purpose switching tasks. The device leverages advanced trench technology to achieve improved switching speeds compared to traditional planar structures while maintaining a small physical footprint suitable for dense circuit board layouts.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin compatibility or electrical equivalence with other manufacturers' parts without reviewing their respective datasheets.
