2N7002NXBKR

$0.13

Description：MOSFET N-CH 60V 270MA TO236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:09ed06911353 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 270MA TO236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23.6 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：310mW (Ta), 1.67W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002NXBKR

Overview

The Nexperia 2N7002NXBK is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a small SOT23 (TO-236AB) surface-mounted plastic package with three terminals. The device supports a drain-source voltage of 60 V and a gate-source voltage range of -20 V to +20 V. At 25 °C, the continuous drain current reaches 270 mA at Tamb and 330 mA at Tsp. The typical drain-source on-state resistance is 2.2 Ω at VGS = 10 V and ID = 200 mA. Total power dissipation is rated at 310 mW in free air and up to 1670 mW when mounted on a PCB with a 1 cm² drain pad.

Feature Summary

Logic-level compatible for direct interface with standard logic circuits
Very fast switching performance enabled by Trench MOSFET technology
ElectroStatic Discharge protection exceeding 2 kV Human Body Model rating

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging format before purchase. Confirm that the application environment remains within the specified thermal limits, as power dissipation varies significantly between free-air and PCB-mounted conditions. Ensure the design accounts for the absolute maximum ratings to prevent permanent damage during operation or transient events.

Selection Notes

Select this component for designs requiring a compact N-channel solution with low on-resistance and high ESD robustness. The SOT23 package suits space-constrained layouts. Verify that the gate drive voltage meets the logic-level compatibility requirements. Consider the thermal resistance characteristics when determining heat dissipation strategies for the target application.

Part Context

This part belongs to the 2N7002 series of N-channel Trench MOSFETs manufactured by Nexperia. It represents a specific variant optimized for surface-mount assembly in the SOT23 package. The product utilizes advanced trench technology to achieve improved switching speeds and lower conduction losses compared to older planar technologies.