2N7002P,215

Overview

The Nexperia 2N7002P,215 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a SOT23 (TO-236AB) surface-mounted plastic package with three terminals. The device supports a drain-source voltage of 60 V and a continuous drain current of 360 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 1.6 Ω at VGS = 10 V and a total gate charge of 0.8 nC. It operates within a junction temperature range up to 150 °C and is qualified under the AEC-Q101 automotive standard.

Feature Summary

• Logic-level compatible for direct interface with standard logic circuits
• Very fast switching performance enabled by Trench MOSFET technology
• Qualified for automotive applications according to AEC-Q101 standards

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a small SMD package is required for low-power switching tasks. The 60 V rating suits general signal and low-voltage power control. Ensure thermal management aligns with the specified Rth(j-a) values for the target PCB footprint. Confirm that the logic level requirements match the gate threshold characteristics for reliable turn-on.

Part Context

This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia USA Inc. It represents a specific variant optimized for surface mounting in the SOT23 package. The product utilizes proprietary Trench technology to achieve improved switching speeds and lower on-state resistance compared to older planar designs.

Replacement Considerations

Cross-reference with other 2N7002 variants from different manufacturers if pinout compatibility is critical. Verify that substitute parts meet the same AEC-Q101 qualification if automotive reliability is required. Check for identical package dimensions and marking codes to ensure mechanical fit.