2N7002P,235

Overview

The Nexperia 2N7002P,235 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a SOT23 (TO-236AB) surface-mounted plastic package. It features a drain-source voltage rating of 60 V and a continuous drain current of 360 mA at 25 °C. The device exhibits a maximum on-state resistance of 1.6 Ω at VGS = 10 V and ID = 500 mA. Gate-source voltage limits are ±20 V. Total power dissipation reaches 420 mW at 25 °C ambient temperature. Junction-to-ambient thermal resistance is typically 310 K/W in free air.

Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Very fast switching performance enabled by Trench MOSFET technology
• Qualified to AEC-Q101 automotive reliability standards

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a small SOT23 footprint is required for low-current switching tasks. The 60 V rating provides adequate headroom for 12 V or 24 V systems. Logic-level compatibility allows driving directly from microcontroller GPIOs without additional level-shifting circuitry. Ensure PCB copper area supports the specified thermal dissipation requirements.

Part Context

This part belongs to the 2N7002 family of N-channel MOSFETs manufactured by Nexperia. The '235' suffix indicates the specific tape and reel packaging configuration used for automated assembly. The device represents a standard discrete semiconductor solution for general-purpose switching, distinct from integrated driver ICs or high-power modules.

Replacement Considerations

Direct replacements include the 2N7002,215 and 2N7002PW variants within the same product family. Verify pinout compatibility and ensure the substitute meets the 60 V and 360 mA specifications. Check if the alternative package type matches the existing board layout constraints.