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The 2N7002T-13-G is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes vertical DMOS technology to achieve low on-resistance and fast switching speeds within a compact surface-mount package. The device supports a drain-source voltage of 60V and a continuous drain current of 115mA at 25°C. Key electrical characteristics include a maximum gate-source voltage of ±20V, a typical on-resistance of 7.5 ohms at VGS=10V, and a gate threshold voltage ranging from 1V to 2.5V. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against official Diodes Incorporated documentation to confirm packaging type and environmental compliance status. Ensure the component matches the required pinout and thermal specifications for the target PCB layout. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current production status and availability.
Select this component for low-voltage, small-current applications requiring efficient switching. Consider the SOT-523 package dimensions for space-constrained designs. Evaluate the thermal dissipation requirements against the specified power dissipation limits. Confirm compatibility with the driving circuit's voltage levels relative to the gate threshold specifications.
This component belongs to the widely used 2N7002 family of N-channel MOSFETs. It serves as a standard solution for general-purpose switching tasks in consumer electronics and industrial equipment. The device is commonly utilized where compact size and cost-effectiveness are prioritized alongside moderate electrical performance.
Direct substitutes include the 2N7002DW-7-F from Diodes Incorporated. Other compatible alternatives may include parts from ON Semiconductor or Vishay, provided they match the N-channel configuration, voltage ratings, and package footprint.