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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT-523F
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-89-3
- Package / Case：SC-89, SOT-490
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Overview
The onsemi 2N7002T is an N-channel enhancement mode field effect transistor housed in a SOT-523FL surface mount package. It features a drain-source voltage of 60 V and a continuous drain current of 115 mA at 25 °C. The device exhibits a maximum static drain-source on-resistance of 7.5 Ω at VGS = 5 V and ID = 50 mA, or 2.0 Ω at VGS = 10 V and ID = 500 mA. Total power dissipation is rated at 200 mW with a thermal resistance junction-to-ambient of 625 °C/W. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Ultra-small surface mount package for compact designs
- Low gate threshold voltage for efficient drive requirements
- Fast switching speed capabilities
- Lead-free and RoHS compliant construction
Applications
- Level shift circuits
- Low side load switches
- DC-DC converters
- Portable applications such as digital still cameras, PDAs, and cell phones
Procurement Notes
Verify the specific ordering suffix matches the required packaging format. Confirm that the component meets all applicable environmental standards and regulatory compliance requirements for the intended deployment region before finalizing procurement decisions.
Selection Notes
Select this component when a small footprint N-channel MOSFET is required for low-voltage signal switching. Ensure the application current remains within the 115 mA continuous limit and verify that the gate drive voltage aligns with the specified threshold characteristics for optimal performance.
Part Context
This part belongs to the 2N7002 series of small signal MOSFETs manufactured by onsemi. It utilizes advanced DMOS technology to achieve high unit density and low on-resistance. The device is designed for general-purpose switching applications where space constraints are critical.
Replacement Considerations
Potential substitutes include the ZVN3310FTA and the 2V7002LT1G. Verify pinout compatibility and electrical parameters against the original datasheet specifications before implementation.
FAQ
What is the maximum pulsed drain-source voltage?
The maximum pulsed drain-source voltage (VDGR) is 60 V.
Is the device suitable for automotive applications?
While the standard 2N7002T is not explicitly qualified to AEC-Q101, other variants in the series may be. Consult the specific product documentation for automotive qualification status.
