2N7002T-7-F

$0.29

Description：MOSFET N-CH 60V 115MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bbc6e86dcdd5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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2N7002T-7-F

Overview

The 2N7002T-7-F is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at +25°C. The device exhibits a maximum on-resistance of 7.5Ω at VGS=5V and ID=50mA, with a gate threshold voltage ranging from 1.0V to 2.0V. Total power dissipation is rated at 150mW, and the junction temperature range spans from -55°C to +150°C. It utilizes an ultra-small SOT523 surface-mount package.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
Low gate threshold voltage enabling easy drive compatibility
Totally lead-free and fully RoHS compliant construction

Applications

DC-DC converters
Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify that the ordering suffix '-7-F' corresponds to the specific tape and reel packaging configuration required for automated assembly processes. Confirm compliance with environmental directives such as RoHS 3 and halogen-free status if mandated by project specifications. Ensure the component meets AEC-Q101 standards if automotive reliability requirements are applicable to the design.

Selection Notes

Select this component when a compact N-channel MOSFET is needed for low-current switching applications. The SOT523 package is suitable for space-constrained designs requiring surface mount technology. Consider the 60V breakdown voltage and 115mA continuous current limits to ensure adequate headroom for the intended load conditions and thermal environment.

Part Context

This part belongs to the 2N7002T series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications in portable and battery-operated electronic devices.

Replacement Considerations

Consult official manufacturer documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementation.