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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：150mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The Diodes Incorporated 2N7002VC-7 is a dual N-channel enhancement mode MOSFET housed in an SOT563 surface-mount package. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 280mA at 25°C. The device exhibits a maximum static drain-source on-resistance (RDS(on)) ranging from 7.5Ω to 13.5Ω depending on gate drive conditions. Total power dissipation is rated at 150mW, with an operating temperature range spanning -55°C to +150°C. Key electrical parameters include a gate threshold voltage between 1.0V and 2.5V, input capacitance up to 50pF, and switching delay times capped at 20ns.
Feature Summary
- Dual N-channel configuration within a compact SOT563 package for space-efficient circuit designs
- Low on-resistance and low gate threshold voltage for efficient signal processing
- Fast switching speed combined with low input/output leakage characteristics
- Qualified to JEDEC standards for high reliability applications
Applications
- Load switching circuits requiring dual channel control
- Signal processing and level shifting interfaces
- Motor controller driver stages
Procurement Notes
Verify the specific suffix '-7' indicates tape and reel packaging containing 3000 units per reel. Confirm that the 'VC' designation corresponds to the standard dual N-channel variant rather than the 'VAC' automotive grade version. Ensure procurement channels provide original manufacturer documentation to validate component authenticity and traceability.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal footprint. Compare RDS(on) values against load requirements under specific VGS conditions. Evaluate thermal resistance limits if ambient temperatures approach the upper operational boundary. Verify compatibility with PCB pad layouts specified in application notes.
Part Context
This part belongs to the 2N7002VC/VAC series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes vertical DMOS technology to achieve low on-resistance while maintaining robust switching performance. The SOT563 case style allows for automated surface mount assembly in dense electronic assemblies.
Replacement Considerations
Direct substitutes must match the dual N-channel architecture and SOT563 package dimensions. Verify equivalent VDS ratings of 60V and compatible ID capabilities. Check for matching pinout configurations to ensure board-level interchangeability without schematic modifications.
