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Product Detailed Parameters
- Description：MOSFET SOT323 N 60V 13.5OHM
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：24.5 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70-3 (SOT323)
- Package / Case：SC-70, SOT-323
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Overview
The onsemi 2N7002W is a small signal N-channel enhancement mode MOSFET housed in an SC-70 (SOT-323) surface-mount package. It features a drain-to-source voltage rating of 60 V and a maximum continuous drain current of 340 mA at 25°C. The device exhibits a low on-resistance of 1.6 Ω at VGS = 10 V and 2.5 Ω at VGS = 4.5 V. Total gate charge is typically 0.7 nC, supporting efficient switching. Operating junction temperature ranges from -55°C to +150°C with a steady-state power dissipation of 280 mW.
Feature Summary
- ESD protected design for enhanced reliability
- Low RDS(on) for improved efficiency
- Small footprint surface mount package
- AEC-Q101 qualified and PPAP capable
Applications
- Low side load switch
- Level shift circuits
- DC-DC converter
- Portable applications such as DSC, PDA, and cell phones
Procurement Notes
Verify the specific ordering suffix to confirm packaging format and automotive qualification status. Confirm that the selected variant meets AEC-Q101 requirements if the application demands unique site or control change protocols. Ensure compliance with RoHS and halogen-free standards during procurement.
Selection Notes
Select this component for space-constrained designs requiring a compact SC-70 footprint. Consider the 60 V breakdown voltage and 340 mA current capability for general-purpose switching tasks. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your specific board layout conditions.
Part Context
This part belongs to the 2N7002W series of single N-channel MOSFETs manufactured by onsemi. It is designed for small-signal applications where low on-resistance and high ESD protection are critical. The device is available in lead-free, halogen-free, and BFR-free configurations.
Replacement Considerations
The 2V7002WT1G is a confirmed substitute within the same family, offering identical electrical characteristics while meeting additional automotive qualification requirements including PPAP capability.
FAQ
What is the typical total gate charge for the 2N7002W?
The typical total gate charge (QG(TOT)) is 0.7 nC when tested at VGS = 4.5 V, VDS = 10 V, and ID = 200 mA.
Is the 2N7002W suitable for automotive applications?
Yes, the 2V7002W variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
