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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT-323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The 2N7002W-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at +25°C. The device offers a maximum static drain-source on-resistance of 7.5Ω at VGS = 5V and 13.5Ω at VGS = 10V. Total power dissipation is rated at 200mW, with a thermal resistance junction-to-ambient of 625°C/W. It operates within a temperature range of -55°C to +150°C and utilizes the SOT-323 surface mount package.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control
- Power management functions
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable automotive or industrial reliability standards if intended for such environments. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Review the manufacturer's standard terms and conditions regarding warranty and liability before finalizing the purchase order.
Selection Notes
Select this component for applications requiring compact surface-mount solutions with reliable switching performance. Consider the 60V breakdown voltage and 115mA continuous current limits when designing the circuit. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the specified operating temperature range. Verify compatibility with logic-level gate drive voltages given the threshold voltage specifications.
Part Context
This part belongs to the 2N7002 series of N-channel MOSFETs designed for general-purpose switching applications. It is housed in the SOT-323 (Standard) case type, providing a small footprint suitable for dense PCB layouts. The device is qualified to JEDEC standards for high reliability and is manufactured in facilities certified under IATF 16949.
Replacement Considerations
Consult official datasheets for alternative parts from other manufacturers to verify pinout compatibility and electrical parameter equivalence. Ensure any substitute component meets the same voltage, current, and thermal requirements.
