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Product Detailed Parameters
- Description：MOSFET SOT-323 N 60V 0.115A 13.5
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：13.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Diotec Semiconductor 2N7002W is an N-channel enhancement mode MOSFET housed in a SOT-323 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA at 25°C. The device has a maximum power dissipation of 200 mW and operates up to a junction temperature of 150°C. Key electrical characteristics include a gate-source threshold voltage ranging from 1 V to 2 V, a forward transfer admittance of 80 mS, and an input capacitance of 50 pF.
Feature Summary
- Fast switching times for efficient signal processing
- Compliant with RoHS (without exemption), REACH regulations, and conflict minerals standards
Applications
- Signal processing circuits
- Driver stages
- Logic level converters
Procurement Notes
Verify the specific ordering suffix against official Diotec documentation to confirm mechanical variations or packaging types. Ensure compliance requirements such as RoHS and REACH status match project specifications. Confirm that the commercial grade rating aligns with the intended application environment before finalizing procurement.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with logic-level drive capability. The low threshold voltage allows direct interfacing with standard logic outputs. Consider the thermal resistance and power dissipation limits when designing for higher ambient temperatures or continuous load conditions.
Part Context
This part belongs to the 2N7002 family of N-channel enhancement mode FETs. While other variants exist in different packages like SOT-23, the 2N7002W specifically utilizes the SOT-323 form factor. It serves as a general-purpose switch suitable for low-power digital and analog control tasks.
Replacement Considerations
Cross-reference with other manufacturers' 2N7002 equivalents in SOT-323 packages. Verify pinout compatibility and ensure that critical parameters such as Rds(on) and Vgs(th) meet the design requirements.
