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Product Detailed Parameters
- Description：MOSFET N-CH 60V 310MA SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：24.5 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70-3
- Package / Case：SC-70, SOT-323
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Overview
The 2N7002WT3G is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 60 V and a continuous drain current of 310 mA at 25°C ambient temperature. The device utilizes SC-70 (SOT-323) surface-mount packaging with three pins. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a typical gate charge of 0.7 nC at 4.5 V, and a maximum power dissipation of 280 mW at the junction temperature. Operating temperatures range from -55°C to +150°C.
Feature Summary
- N-channel enhancement mode operation for signal switching applications
- Compact SC-70 surface-mount package design for space-constrained layouts
- Low gate charge capability supporting efficient drive requirements
- Extended thermal operating range suitable for diverse environments
Applications
- General-purpose small-signal switching circuits
- Battery-powered portable electronic devices
- Signal level shifting between logic families
- Load switching in low-power consumer electronics
Procurement Notes
Verify the specific suffix 'T3G' against official manufacturer documentation to confirm tape-and-reel packaging quantities and availability status. Ensure compliance with RoHS directives and AEC-Q101 automotive qualification requirements if applicable to the target system. Cross-reference datasheet revisions to validate parameter consistency before finalizing component selection.
Selection Notes
Select this component when a compact N-channel MOSFET with 60 V breakdown is required for low-current applications. Evaluate the trade-off between the 310 mA continuous current limit and the SC-70 package's thermal dissipation capabilities. Confirm that the 0.7 nC gate charge aligns with the driving circuit's speed and power constraints.
Part Context
This part belongs to the 2N7002W series of small-signal MOSFETs designed for general-purpose switching. It serves as a surface-mount alternative to through-hole variants like the SOT-23 packaged 2N7002KT3G. The device is optimized for cost-sensitive consumer electronics where board space is limited and moderate switching speeds are sufficient.
Replacement Considerations
Compatible substitutes include the 2N7002L and 2V7002LT1G from onsemi. Verify pinout compatibility and ensure equivalent voltage and current ratings when replacing the original component in existing designs.
