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Product Detailed Parameters
- Description：MOSFET N-CH 60V 150MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：40V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The onsemi 2N7008 is an N-channel enhancement mode silicon gate TMOS small-signal field-effect transistor designed for high voltage and high speed applications. It features a maximum drain-to-source voltage of 60 Vdc, a continuous drain current of 150 mAdc, and a pulsed drain current of 1000 mAdc. The device operates within a temperature range of -55°C to +150°C and dissipates up to 400 mW at 25°C ambient temperature. Key electrical characteristics include a static drain-to-source on-resistance of 7.5 Ω at VGS = 5 Vdc and ID = 50 mAdc, with a maximum input capacitance of 50 pF.
Feature Summary
- Silicon gate construction enables fast switching speeds suitable for high-speed circuitry.
- Enhanced mode operation provides reliable switching performance in various electronic designs.
- Robust thermal handling capabilities support operation across a wide temperature range.
Applications
- Switching regulators
- Converters
- Solenoid drivers
- Relay drivers
- Telecommunication switches
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging options such as Ammo Pack or Radial Tape and Reel. Confirm component status as active or obsolete through authorized distributors before procurement planning. Ensure compliance with RoHS directives if required by the application specifications.
Selection Notes
Select this component when designing circuits requiring high-voltage N-channel MOSFETs with moderate current handling capabilities. Consider the 7.5 Ω on-resistance for power loss calculations in low-current switching scenarios. Evaluate the TO-92 package constraints for thermal management and physical space requirements in the target assembly.
Part Context
This part belongs to the family of small-signal field-effect transistors manufactured by onsemi. It utilizes TMOS technology to deliver enhanced performance in compact packages. The device serves as a fundamental building block for discrete semiconductor applications requiring efficient electronic switching.
Replacement Considerations
Consult official substitution guides for verified alternative part numbers. Cross-reference pinouts and electrical parameters carefully to ensure compatibility with existing circuit designs without modifying the board layout.
FAQ
What is the maximum drain-to-source voltage rating?
The maximum drain-to-source voltage (VDSS) is rated at 60 Vdc.
How does the silicon gate technology benefit this device?
The silicon gate design facilitates fast switching speeds, making it suitable for high-frequency applications like switching regulators and converters.
