Single Bipolar Transistors 2N706A PBFREE product image

2N706A PBFREE

$0.69
  • Description:15V 50MA 300MW TH TRANSISTOR-SMA
  • Series:-

SKU:bd84ad1554ea Category: Brand:

  
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2N706A PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 15V 50MA 300MW TH TRANSISTOR-SMA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N706A PBFREE

  • Description:15V 50MA 300MW TH TRANSISTOR-SMA
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 10mA, 1V
  • Power - Max:300 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N706A PBFREE

2N706A PBFREE

Single Bipolar Transistors Overview

The 2N706A PBFREE is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and operates with a collector-emitter breakdown voltage (VCEO) of 15 V. Key electrical limits include an emitter-base voltage (VEBO) of 5 V and a power dissipation rating of 300 mW. The component provides a minimum DC current gain (hFE) of 20, with a maximum gain of 60.

Single Bipolar Transistors Feature Summary

  • Fast switching capability suitable for small signal applications
  • Single NPN configuration within a hermetically sealed metal can
  • Through-hole mounting compatibility via standard TO-18-3 lead frame

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Small signal amplification stages
  • Low voltage logic interfacing

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision to confirm RoHS compliance status and exact pinout orientation before integration. Ensure thermal management strategies align with the 300 mW power dissipation limit under expected operating conditions. Confirm that the TO-18-3 package dimensions match the target PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select this component when a robust metal can package is required for environmental protection or high reliability. The low voltage rating and moderate current capacity make it appropriate for sensitive control circuits rather than power handling tasks. Consider the fast switching characteristic if timing constraints exist in the signal path.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor discrete semiconductor product line, specifically categorized under Bipolar Junction Transistors. It serves as a general-purpose NPN switch and amplifier alternative to legacy military-grade specifications often associated with the 2N706A designation.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Generic replacements may differ in hFE ranges or switching speeds.

2N706A PBFREE2N706A PBFREE
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