2N7225U

Description：MOSFET N-CH 200V 27.4A TO267AB
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:b0f9f959297c Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 27.4A TO267AB
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：4W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-267AB
Package / Case：TO-267AB

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2N7225U

Overview

The 2N7225U is an N-channel power MOSFET manufactured by Microsemi Corporation. It features a drain-to-source voltage rating of 200 V and a continuous drain current of 27.4 A at case temperature. The device is housed in a TO-267AB surface mount package. Thermal performance includes a power dissipation of 4 W at ambient temperature and 150 W at case temperature.

Feature Summary

N-channel polarity configuration for power switching applications
Surface mount TO-267AB package design
High-voltage capability with 200 V drain-to-source rating

Applications

Power switching circuits
Industrial motor control systems
Automotive electronics modules

Procurement Notes

Verify the manufacturer designation, as this component has been associated with Actel and Microchip in various records. Confirm the specific datasheet version to ensure alignment with the TO-267AB package dimensions and electrical characteristics provided in official documentation.

Selection Notes

Select this component for applications requiring robust N-channel MOSFET performance in a surface mount format. Consider the thermal dissipation requirements carefully, as the device supports significantly higher power handling at case temperature compared to ambient conditions.

Part Context

This part belongs to the single FET and MOSFET category within Microsemi's portfolio. It serves as a high-reliability power semiconductor solution, often utilized in environments demanding stable operation under significant electrical loads.