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Product Detailed Parameters
- Description：MOSFET N-CH 500V 12A TO267AB
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：415mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-267AB
- Package / Case：TO-267AB
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Overview
The Microsemi Corporation 2N7228U is a hermetically sealed, surface-mount N-channel power MOSFET designed for high-reliability applications. It utilizes HEXFET technology to achieve low on-state resistance and high transconductance. The device features an electrically isolated package that eliminates the need for additional insulating materials between the component and heatsink, thereby improving thermal efficiency. Key electrical characteristics include a drain-source voltage of 600V, a continuous drain current of 12A at case temperature, and a maximum on-resistance of 0.415 ohms. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- HEXFET technology provides low on-state resistance combined with high transconductance for efficient switching performance.
- Totally isolated package design removes the requirement for separate isolating material between the device and heatsink.
- Hermetically sealed construction ensures durability in demanding environments.
- Capable of dynamic dv/dt rating and offers ease of paralleling for higher current applications.
Applications
- Switching power supplies
- Motor controls and inverters
- Choppers and audio amplifiers
- High energy pulse circuits
Procurement Notes
Verify the specific manufacturer source when procuring this component, as it appears in listings from both International Rectifier and Microsemi Corporation. Confirm that the unit meets MIL-PRF-19500/592 qualification standards if military-grade reliability is required. Ensure the surface mount package type matches the intended PCB footprint and that the hermetic seal integrity is maintained during handling.
Selection Notes
Select the 2N7228U for designs requiring robust surface-mount power switching with high thermal efficiency. Its isolated package simplifies heatsinking compared to traditional insulated mounts. Consider its 600V rating and 12A current capacity for medium-power industrial applications. Verify compatibility with drive requirements due to its MOSFET nature and ensure adequate thermal management for the specified operating temperature range.
Part Context
This component belongs to the advanced line of power MOSFET transistors utilizing HEXFET technology. It is distinct from through-hole variants like the JANTX2N7228, offering a surface-mount solution. The device is qualified per MIL-PRF-19500/592, indicating its suitability for aerospace and defense sectors where long-term reliability and environmental resilience are critical operational parameters.
Replacement Considerations
Cross-reference with other HEXFET series devices from Microsemi or International Rectifier. Ensure replacement parts maintain the same 600V/12A ratings and surface-mount package dimensions. Verify that any substitute also meets the required MIL-PRF-19500/592 qualification if military specifications are mandatory for the application.
