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Product Detailed Parameters
- Description：TRANS SJT 650V 8A TO276
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：600 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：20 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：685pF @ 500V
- Resistance - RDS(On)：170 mOhms
- Power - Max：200 W
- Operating Temperature：-55°C ~ 210°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-276AA
- Supplier Device Package：SMD-0.5
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 2N7638-GA is a normally-off Silicon Carbide Junction Transistor designed for high-temperature environments. It features a maximum operating junction temperature of 250 °C and a Drain-Source Voltage (VDS) rating of 650 V. The device delivers a continuous Drain Current (ID) of 8 A at a case temperature of 158 °C. Typical on-resistance (RDS(ON)) values range from 180 mΩ at 25 °C to 490 mΩ at 250 °C under specified gate drive conditions. Packaged in the hermetic SMD0.5/TO-276 outline, it offers low switching losses and robust short-circuit withstand capability.
Feature Summary
- Gate oxide free SiC switch architecture
- Temperature independent switching performance
- Positive temperature coefficient for easy paralleling
Applications
- Down Hole Oil Drilling
- Geothermal Instrumentation
- Hybrid Electric Vehicles (HEV)
- Solar Inverters
- Induction Heating
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and datasheet revision status prior to integration. Ensure handling procedures align with the specifications of the hermetic SMD0.5/TO-276 package to maintain thermal and electrical integrity during assembly.
Selection Notes
Select this component for applications requiring operation above standard silicon limits. Evaluate thermal management requirements given the 1 °C/W junction-to-case resistance. Verify that system voltage does not exceed the 650 V rating and that gate drive signals accommodate the specific forward voltage characteristics across the full temperature range.
Part Context
This part belongs to the GeneSiC Semiconductor lineup of wide bandgap power devices. It utilizes Silicon Carbide technology to achieve superior thermal stability compared to traditional silicon counterparts. The TO-276 hermetic package supports rigorous industrial and aerospace deployment standards.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 250 °C.
Is the device suitable for paralleling?
Yes, the device features a positive temperature coefficient which facilitates safe paralleling operations.
What is the typical on-resistance at 250 °C?
At Tj = 250 °C with ID = 8 A and IG = 500 mA, the typical RDS(ON) is 490 mΩ.
