Single Bipolar Transistors 2PC1815Y,412 product image

2PC1815Y,412

  • Description:TRANS NPN 50V 0.15A TO-92-3
  • Series:-

SKU:cd92e6cfe175 Category: Brand:

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2PC1815Y,412 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 50V 0.15A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2PC1815Y,412

  • Description:TRANS NPN 50V 0.15A TO-92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
  • Power - Max:500 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2PC1815Y,412

2PC1815Y,412

Single Bipolar Transistors Overview

The 2PC1815Y,412 is an NPN general-purpose transistor manufactured by NXP USA Inc. It features a maximum collector-emitter voltage of 50 V and a continuous DC collector current rating of 150 mA. The device utilizes a TO-92 (SOT54) plastic package with three leads. Electrical characteristics include a minimum DC current gain (hFE) of 120 at IC = 2 mA and 150 mA, with a transition frequency (fT) of 80 MHz. Thermal resistance from junction to ambient is 250 K/W.

Single Bipolar Transistors Feature Summary

  • Low voltage operation suitable for general-purpose switching applications
  • Low current capability designed for small signal amplification tasks
  • Standard through-hole packaging for easy integration into printed-circuit boards

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Audio amplifier driver stages
  • Small signal amplification

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Y' corresponds to the required hFE binning range of 120 to 240 as defined in the official specification. Confirm the manufacturer origin, noting historical Philips Semiconductors documentation may apply to current NXP inventory. Ensure the TO-92 package variant matches the design footprint requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing low-voltage, low-current NPN switching or amplification circuits requiring standard through-hole mounting. Consider the PNP complement 2PA1015 if complementary pairs are needed. Evaluate the thermal resistance and power dissipation limits against the expected operating temperature and board layout conditions to ensure reliable performance within the specified electrical parameters.

Single Bipolar Transistors Part Context

This component belongs to the NXP discrete semiconductor transistor portfolio, specifically categorized under general-purpose NPN bipolar junction transistors. It serves as a fundamental active element for analog and digital circuit designs requiring moderate voltage handling and current control capabilities in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the 2PA1015. Verify pinout compatibility and electrical symmetry if substituting for complementary push-pull configurations. Cross-reference with other NPN TO-92 transitors only after confirming matching voltage, current, and gain specifications.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2PC1815Y variant?

The 2PC1815Y variant has a minimum DC current gain (hFE) of 120 at IC = 2 mA and IC = 150 mA, with a maximum value of 240.

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) with the emitter open is rated at 60 V.

Is this transistor suitable for high-frequency RF applications?

No, it is a general-purpose transistor with a transition frequency (fT) of 80 MHz, intended for audio and low-frequency switching rather than high-frequency RF use.

2PC1815Y,4122PC1815Y,412

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