Single Bipolar Transistors 2SA1020-Y,F(M product image

2SA1020-Y,F(M

  • Description:TRANS PNP 50V 2A TO-92MOD
  • Series:-

SKU:72b319739a01 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SA1020-Y,F(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1020-Y,F(M

  • Description:TRANS PNP 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1020-Y,F(M

2SA1020-Y,F(M

Single Bipolar Transistors Overview

The Toshiba 2SA1020-Y,F(M is a PNP silicon epitaxial transistor in a TO-92MOD package. It supports a collector current of 2 A and a collector-emitter voltage of -50 V. The device features a maximum power dissipation of 900 mW, a transition frequency of 100 MHz, and a storage time of 1.0 μs. DC current gain ranges from 70 to 240 at -0.5 A, with a saturation voltage of -0.5 V max at -1 A.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching
  • High-speed switching capability with short storage times
  • High collector power dissipation rating

Single Bipolar Transistors Applications

  • Power amplifier applications
  • Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm RoHS compliance status and binning classifications. Confirm that the requested part number matches the exact JEDEC TO-92MOD physical dimensions and pinout configuration required by your circuit design before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 2 A and robust power dissipation capabilities. Ensure the operating junction temperature remains within the specified range and consider derating guidelines for thermal management. Verify compatibility with complementary NPN transistors like the 2SC2655 if push-pull configurations are utilized.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP bipolar junction transistors manufactured using the PCT process. It is designed as a general-purpose discrete semiconductor device suitable for consumer electronics and industrial equipment where reliable amplification and switching performance are required.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC2655 as the complementary NPN transistor. Cross-referencing other manufacturers requires verifying identical pinouts, voltage ratings, and current capabilities.

2SA1020-Y,F(M2SA1020-Y,F(M

Click on the inquiry