Single Bipolar Transistors 2SA1020-Y,T6NSF(J product image

2SA1020-Y,T6NSF(J

  • Description:TRANS PNP 50V 2A TO-92MOD
  • Series:-

SKU:6e0a9eac0bfb Category: Brand:

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2SA1020-Y,T6NSF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1020-Y,T6NSF(J

  • Description:TRANS PNP 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1020-Y,T6NSF(J

2SA1020-Y,T6NSF(J

Single Bipolar Transistors Overview

The Toshiba 2SA1020-Y,T6NSF(J) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of 2 A and a collector-emitter voltage rating of 50 V. The device offers a high power dissipation capacity of 900 mW and a transition frequency of 100 MHz. Key electrical characteristics include a low collector saturation voltage of -0.5 V at 1 A and a storage time of 1.0 μs. The component is housed in a JEDEC TO-92MOD package with a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching
  • High-speed switching capability with short storage time
  • High collector power dissipation rating

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status by checking for an underlined lot number on the physical component, as this indicates environmental compatibility. Confirm the specific hFE binning associated with the 'Y' suffix against project requirements. Ensure design adheres to derating concepts outlined in the Toshiba Semiconductor Reliability Handbook for long-term stability.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a complementary match to the 2SC2655 NPN transistor. Consider the TO-92MOD package constraints for thermal management when operating near the 900 mW limit. Evaluate the hFE (1) classification range of 70 to 240 to ensure adequate gain for the intended load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1020 series of general-purpose PNP transistors manufactured by Toshiba Semiconductor and Storage. The series is designed for use in consumer electronics and industrial equipment where moderate current handling and fast switching are required. It serves as a standard discrete semiconductor solution for analog and digital circuit stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2655 as the complementary NPN transistor for this device. Verify pinout compatibility and thermal resistance values when substituting with other PNP transistors from different manufacturers.

2SA1020-Y,T6NSF(J2SA1020-Y,T6NSF(J

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