2SA11230RA

Single Bipolar Transistors Overview

The Panasonic 2SA1123 is a silicon PNP epitaxial planar transistor designed for low-frequency high breakdown voltage amplification. It features a collector-emitter voltage of -150 V, a collector current of -50 mA, and a power dissipation of 750 mW. The device offers a transition frequency of 200 MHz and a forward current transfer ratio (hFE) ranging from 130 to 450 depending on the rank. Packaged in a TO-92-B1 format, it serves as a complementary pair to the 2SC2631 NPN transistor.

Single Bipolar Transistors Feature Summary

• High collector-emitter voltage rating suitable for high breakdown applications
• Optimized complementary pairing with the 2SC2631 for pre-driver stages
• Small collector output capacitance for improved signal integrity
• Satisfactory forward current transfer ratio characteristics across collector currents

Single Bipolar Transistors Applications

• Pre-driver stage for 20 W to 40 W output amplifiers
• Low-frequency high breakdown voltage amplification circuits
• General electronic equipment such as office and communications devices

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R, S, or T) required for your circuit design, as gain varies significantly between classifications. Confirm the package type matches your PCB footprint requirements. Check the manufacturer's official website for the latest lifecycle status, as this component may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE rank based on the required gain stability for your amplifier application. Ensure the operating voltage does not exceed the -150 V collector-emitter limit. Consider the thermal management capabilities, as the maximum junction temperature is 150 °C. Verify that the small signal characteristics align with the noise voltage specifications for your intended frequency range.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon PNP epitaxial planar transistors manufactured by Panasonic Electronic Components. It is specifically engineered for general-purpose amplification tasks requiring high voltage tolerance. The device is part of a complementary pair system, designed to work alongside specific NPN counterparts for balanced performance in audio and signal processing stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2631 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SA1123?

The maximum collector-emitter voltage (VCEO) with the base open is -150 V.

How does the hFE vary across different ranks?

The forward current transfer ratio (hFE) ranges from 130 to 220 for Rank R, 185 to 330 for Rank S, and 260 to 450 for Rank T.

Is this transistor suitable for automotive safety applications?

No, the documentation states it is intended for standard applications like household appliances and office equipment. Special applications requiring exceptional reliability, such as automotive safety devices, require consultation with sales staff.