2SA1162-GR,LF

Description：TRANS PNP 50V 0.15A S-MINI
Series：-

SKU:6c77e66ef411 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1162-GR,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1162-GR,LF

Description：TRANS PNP 50V 0.15A S-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：150 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 6V
Power - Max：150 mW
Frequency - Transition：80MHz
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1162-GR,LF

2SA1162-GR,LF

Single Bipolar Transistors Overview

The 2SA1162-GR,LF is a PNP silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of -50 V and a continuous collector current of -150 mA. The device operates with a transition frequency of 80 MHz and a maximum power dissipation of 150 mW. DC current gain ranges from 70 to 400. It is housed in an S-Mini (TO-236-3) surface-mount package and supports a junction temperature up to 125°C.

Single Bipolar Transistors Feature Summary

Complementary pairing with the 2SC2712 NPN transistor for matched circuit performance
Low noise characteristics suitable for audio frequency applications
High DC current gain with excellent linearity across operating currents

Single Bipolar Transistors Applications

Audio frequency general purpose amplifier circuits
Low noise signal amplification stages
General purpose switching applications requiring small form factor

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR against official Toshiba documentation to confirm binning or testing criteria. Ensure the ordering part number matches the required packaging format such as reel or cut tape. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor complementary to the 2SC2712 is required. Consider its low noise figure for sensitive analog front ends. Verify that the -50V voltage rating and 150mA current capacity meet the circuit demands. Ensure the S-Mini package fits the available PCB footprint constraints.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1162 series of small-signal bipolar transistors. It utilizes Toshiba's PCT process for silicon epitaxial construction. The series is designed for general-purpose use in consumer electronics and industrial equipment where space-saving surface mount packages are necessary.