2SA1162S-Y, LF(D

Single Bipolar Transistors Overview

The 2SA1162S-Y is a small signal PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of -50 V and a maximum collector current of -150 mA. The device offers a high DC current gain (hFE) ranging from 70 to 400, with excellent linearity where the ratio of hFE at -0.1 mA to -2 mA is typically 0.95. Noise performance is characterized by a typical noise figure of 1 dB and a maximum of 10 dB. It is housed in a small outline surface-mount package.

Single Bipolar Transistors Feature Summary

• Designed for audio frequency general purpose amplifier applications
• Utilizes PCT process for high voltage and high current capabilities
• Provides low noise characteristics suitable for sensitive signal amplification
• Offers complementary pairing with the 2SC2712 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifiers
• Low noise signal amplification circuits
• Complementary amplifier stages paired with 2SC2712

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'LF(D' against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component matches the standard 2SA1162 electrical parameters, including the -50V VCEO and -150mA IC ratings. Confirm RoHS compliance status if required for the assembly process. Cross-reference the manufacturer part number to avoid confusion with similar variants.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high current gain and low noise in a compact surface-mount form factor. It is suitable for audio applications where linearity is critical. Consider the complementary 2SC2712 for balanced push-pull configurations. Verify that the operating voltage does not exceed the -50V collector-emitter limit and that thermal dissipation remains within the specified absolute maximum ratings.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of silicon epitaxial planar transistors utilizing the PCT process. It is engineered for general-purpose amplification tasks, particularly in the audio frequency range. The device is designed to offer improved linearity and noise performance compared to standard small-signal transistors, making it a specialized choice for high-fidelity audio circuits.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2712 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.