2SA1213-O-AP

Single Bipolar Transistors Overview

The 2SA1213-O-AP is a PNP silicon epitaxial transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage of -50 V and a collector current rating of -0.5 A. The device dissipates up to 500 mW at 25°C, rising to 1000 mW on a ceramic substrate. Operating junction temperature ranges from -55°C to +150°C. DC current gain (hFE) varies between 70 and 240 depending on the suffix variant. Transition frequency reaches 100 MHz typical.

Single Bipolar Transistors Feature Summary

• High-speed switching capability for rapid circuit response
• Low saturation voltage for efficient power handling
• RoHS compliant construction with lead-free finish

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify authenticity through authorized MCC distributors or direct purchase to avoid counterfeit components. Confirm specific hFE binning requirements match the O or Y suffix variants. Ensure thermal management aligns with the specified derating curves for ambient temperatures exceeding 25°C. Check halogen-free availability if required by project specifications.

Single Bipolar Transistors Selection Notes

Select this component for medium-power PNP switching tasks requiring low saturation characteristics. Consider the SOT-89 package for its thermal performance relative to smaller packages. Evaluate the transition frequency against signal speed requirements. Verify that the collector current limits accommodate peak load demands without exceeding safe operating area boundaries.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SA1213 series, designed as a complementary counterpart to NPN types like the 2SC2873. It utilizes a PNP silicon epitaxial planar structure housed in an SOT-89 plastic envelope. The device is optimized for applications demanding reliable switching performance within standard industrial temperature ranges.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SA1296, 2SA1297, 2SA1315, 2SA1428, 2SA1680, and 2SA1734. These alternatives share similar power amplifier and switching functionalities. Verify pinout compatibility and electrical parameter overlaps before implementation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -50 V.

How does the package affect power dissipation?

Power dissipation increases from 500 mW to 1000 mW when mounted on a ceramic substrate compared to free-air conditions.

What is the typical transition frequency?

The transition frequency (fT) is typically 100 MHz under standard test conditions.