2SA1222-T-AZ

Single Bipolar Transistors Overview

The Renesas Electronics 2SA1222-T-AZ is a PNP silicon epitaxial transistor designed for low-frequency power amplifiers. It features a collector-to-emitter voltage (VCEO) of -160 V and a collector-to-base voltage (VCBO) of -160 V. The device supports a maximum DC collector current of -500 mA and a peak pulse collector current of -1.0 A. Total power dissipation is rated at 1.0 W, with a junction temperature range up to +150 °C. The gain bandwidth product (fT) reaches 45 MHz, and the DC current gain (hFE) ranges from 100 to 400 under specified conditions.

Single Bipolar Transistors Feature Summary

• Complementary pairing with 2SC2958 and 2SC2959 NPN transistors
• High withstand voltage capability suitable for vertical deflection output stages
• Optimized for audio output applications and variable power supplies

Single Bipolar Transistors Applications

• TV vertical deflection output circuits
• Audio output amplifier stages
• Variable power supply regulation

Single Bipolar Transistors Procurement Notes

Verify the specific quality grade required for your application against Renesas Electronics Standard, High Quality, or Specific classifications. Confirm that the intended use does not fall under restricted categories such as life support systems without prior written consent. Ensure compliance with applicable export control laws and regulations before procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing low-frequency power amplifiers requiring high voltage handling capabilities. Consider its complementary nature with the 2SC2959 series for balanced circuit designs. Evaluate thermal management requirements given the 1.0 W power dissipation limit and ensure operating conditions remain within the absolute maximum ratings to prevent malfunction.

Single Bipolar Transistors Part Context

This component belongs to the Renesas Electronics family of PNP silicon epitaxial transistors. Originally developed by NEC Electronics Corporation, it was integrated into the Renesas portfolio following the April 2010 merger. The part is specifically engineered for robust performance in analog power applications where high voltage isolation and reliable switching are critical.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC2959 as the direct complementary NPN counterpart. For replacement purposes, verify pinout compatibility and ensure the substitute meets the -160 V breakdown voltage requirement. Consult official documentation for any updated specifications or alternative packages.