2SA1244-Y(T6L1,NQ)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1244-Y(T6L1,NQ) is a silicon PNP epitaxial axial type transistor designed for high current switching applications. It features a collector-emitter breakdown voltage of -50 V, a collector-base voltage of -60 V, and an emitter-base voltage of -5 V. The device supports a maximum continuous collector current of -5 A and a base current of -1 A. Power dissipation reaches 1.0 W at Ta = 25°C and 20 W at Tc = 25°C. The junction temperature limit is 150°C. DC current gain (hFE) ranges from 120 to 240 under specific test conditions. Transition frequency is typically 60 MHz.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage of -0.4 V maximum at -3 A collector current
• High speed switching capability with typical storage time of 1.0 μs
• Complementary pairing available with the 2SC3074 NPN transistor

Single Bipolar Transistors Applications

• High current switching circuits
• Power supply regulation stages
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as documentation indicates separate labeling for standard and compliant versions. Confirm package code alignment with the specified 2-7J1A JEDEC outline. Ensure design reliability accounts for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook when operating near absolute maximum ratings.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust high-current handling up to 5 A with fast turn-off characteristics. The low saturation voltage minimizes power loss during conduction. Verify that the complementary 2SC3074 is utilized if push-pull configurations are required. Ensure thermal management strategies accommodate the specified power dissipation limits at both ambient and case temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1244 series of silicon PNP transistors manufactured using Toshiba's PCT process. It is specifically engineered for high current switching tasks where low saturation voltage and rapid switching speeds are critical performance factors. The axial leaded package facilitates through-hole mounting in industrial and consumer electronic power stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3074 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SA1244?

The typical transition frequency (fT) is 60 MHz, measured at VCE = -4 V and IC = -1 A.

How does the hFE classification 'Y' differ from 'O'?

The 'Y' classification indicates a DC current gain range of 120 to 240, whereas the 'O' classification covers a range of 70 to 140.

Is this component suitable for aerospace or medical equipment?

No. Toshiba explicitly states the product is not intended or warranted for use in equipment requiring extraordinarily high levels of quality and reliability, such as aerospace or medical devices.