2SA1313-Y,LF

Single Bipolar Transistors Overview

The 2SA1313-Y,LF is a silicon PNP epitaxial transistor manufactured using Toshiba's PCT process. It features an SOT-23 (TO-236MOD) package with a collector-emitter voltage of -50 V and a collector current rating of -500 mA. The 'Y' suffix designates a DC current gain (hFE) range of 120 to 240 at -100 mA, ensuring high amplification for low-power applications.

Single Bipolar Transistors Feature Summary

• Utilizes the PCT process for excellent hFE linearity
• High breakdown voltage capability up to -50 V
• Designed as a complementary pair to the 2SC3325 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency low power amplifier circuits
• Driver stage amplifier configurations
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required hFE classification. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Ensure the component meets specific reliability requirements by consulting the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component when a small SOT-23 package is required alongside a minimum -50 V collector-emitter voltage. The Y suffix provides a higher gain band compared to the O variant. Verify compatibility with the complementary 2SC3325 device if designing push-pull output stages.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1313 series of general-purpose small signal transistors. Manufactured by Toshiba Semiconductor and Storage, it serves as a standard discrete semiconductor solution for consumer electronics and audio equipment requiring compact packaging and reliable switching performance.

Single Bipolar Transistors Replacement Considerations

The 2SC3325 is the officially documented complementary NPN transistor for this component. Other generic PNP transistors may be substituted only if they match the -50 V voltage rating, -500 mA current limit, and SOT-23 footprint.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate in the 2SA1313-Y model?

The 'Y' suffix specifies the DC current gain (hFE) classification, which ranges from 120 to 240 at a collector current of -100 mA.

Is the 2SA1313 suitable for high-frequency RF applications?

No, the datasheet specifies its use for audio frequency low power amplifiers and driver stages, not high-frequency RF operations.

What is the maximum collector power dissipation?

The absolute maximum rating for collector power dissipation is 200 mW at an ambient temperature of 25°C.