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Product Detailed Parameters
- Description：SMALL SIGNAL BIPOLAR TRANSISTOR
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：300 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：3-SSIP
- Supplier Device Package：3-SPA
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Overview
The onsemi 2SA1345 is a PNP epitaxial planar silicon transistor designed for high-speed switching applications. It features a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 7 A. The device utilizes an MBIT process to achieve low saturation voltage and fast switching speeds. It is housed in a TO-3PN package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 70 W at 25°C ambient temperature.
Feature Summary
- High-speed switching capability enabled by MBIT process technology
- Low collector-to-emitter saturation voltage for improved efficiency
- Robust construction with high allowable power dissipation
Applications
- DC/DC converter circuits
- Relay drivers
- Lamp drivers
- Motor drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's datasheet to confirm exact mechanical dimensions and thermal characteristics. Ensure the component matches the required pinout configuration for the target PCB footprint. Cross-reference the date code and lot traceability if long-term supply stability is critical for the production run.
Selection Notes
Select this component when a PNP transistor with 80V rating and 7A current capacity is required in a TO-3PN package. Consider the thermal resistance and heat sinking requirements due to the 70W power dissipation rating. Verify that the switching speed and hFE range meet the specific drive circuit requirements compared to alternative packages.
Part Context
This part belongs to onsemi's lineup of bipolar junction transistors optimized for power switching. It complements other high-current devices in the series, offering a balance between voltage handling and current capacity in a traditional through-hole package format suitable for industrial and automotive power stages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching VCEO, IC, package type, and switching characteristics.
