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The onsemi 2SA1346-AC is a single pre-biased PNP bipolar junction transistor (BJT) in a 3-SPA through-hole package. It integrates bias resistors R1 and R2, both specified at 22 kΩ. The device features a collector-base voltage of 50 V, a maximum collector current of 100 mA, and a transition frequency of 250 MHz. Maximum power dissipation is rated at 300 mW with a collector cutoff current of 500 nA.
Verify the specific suffix against official documentation to confirm pinout and electrical characteristics. Ensure the procurement channel provides authentic onsemi components to guarantee reliability. Cross-reference the datasheet for thermal management requirements during integration.
Select this component for circuits requiring a PNP switching element with integrated base biasing. The 22 kΩ resistor values are fixed; verify compatibility with driving logic levels. Consider the 3-SPA package constraints for PCB layout and thermal performance.
This part belongs to the family of single pre-biased bipolar transistors designed to replace discrete resistor networks. It simplifies board space and assembly by combining a PNP transistor with two internal bias resistors into one compact component.
Check for equivalent pre-biased PNP transistors with matching 22 kΩ internal resistors and compatible voltage ratings. Verify package dimensions and pin configuration before substitution.