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Product Detailed Parameters
- Description：SMALL SIGNAL BIPOLAR TRANSISTOR
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：300 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：3-SSIP
- Supplier Device Package：3-SPA
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Overview
The onsemi 2SA1348 is a PNP epitaxial planar silicon transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 160 V and a continuous collector current capacity of 1 A. The device utilizes MBIT process technology to achieve fast switching speeds and low saturation voltage. It is housed in a compact SOT-89 surface-mount package, facilitating efficient thermal management and space-saving PCB layouts for consumer electronics and industrial control circuits.
Feature Summary
- High breakdown voltage capability suitable for demanding switching environments
- Fast switching speed enabled by advanced MBIT process technology
- Low collector-to-emitter saturation voltage for improved efficiency
- Compact SOT-89 surface-mount package design
Applications
- Color TV sound output stages
- DC-DC converter circuits
- Inverter driver applications
Procurement Notes
Verify the specific ordering suffix and tape/reel configuration against the official datasheet before procurement. Confirm RoHS compliance status and manufacturing origin details directly with the supplier. Ensure the component lot matches the required quality standards for your specific application environment.
Selection Notes
Select this component when a PNP transistor with 160 V breakdown and 1 A current rating is required in an SOT-89 package. Consider its fast switching characteristics for high-frequency applications. Evaluate thermal dissipation requirements relative to the package's power handling capabilities under your specific operating conditions.
Part Context
This part belongs to onsemi's lineup of bipolar junction transistors utilizing MBIT process technology. It is categorized as a general-purpose high-voltage switching device. The SOT-89 package variant offers a balance between power handling and footprint size compared to through-hole alternatives.
Replacement Considerations
Check for direct pin-compatible substitutes from other manufacturers offering identical 160 V / 1 A specifications in SOT-89 packages. Verify that any replacement maintains comparable hFE ranges and switching times to ensure circuit performance parity.
