2SA1419T-TD-H

Single Bipolar Transistors Overview

The 2SA1419T-TD-H is a PNP bipolar junction transistor manufactured by onsemi, designed for high-voltage switching applications. It features a collector-emitter voltage rating of 160 V and a maximum continuous collector current of 1.5 A. The device utilizes an SOT-89 surface-mount package with three terminals and a plastic/epoxy body. It supports operating temperatures up to 150 °C and offers a minimum DC current gain (hFE) of 200.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding switching environments
• Robust current handling capacity for general-purpose power control
• Compact surface-mount form factor facilitating high-density circuit board layouts

Single Bipolar Transistors Applications

• General high-current switching circuits
• Relay driver interfaces
• High-speed inverter stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-H' against official onsemi documentation to confirm exact binning or tape-and-reel specifications. Ensure the component matches the required SOT-89 footprint and terminal configuration. Cross-reference the manufacturer part number to distinguish between standard and specialized variants within the 2SA1419 family.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor requires 160 V blocking capability and 1.5 A current handling in a compact package. Consider the thermal performance limits and the specific hFE requirements of the application. Evaluate the SOT-89 package suitability for the intended PCB layout and heat dissipation constraints compared to through-hole alternatives.

Single Bipolar Transistors Part Context

This device belongs to the 2SA1419 series of PNP transistors from onsemi. The series is engineered for high-voltage switching tasks, offering a balance of voltage rating and current capacity. The T-TD-H designation indicates a specific packaging and handling format within the broader product line, sharing core electrical characteristics with other variants in the same family.