SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SA1425-Y,T2F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.8A MSTM. Review the specifications below when checking this part for your BOM.
The Toshiba 2SA1425 is a silicon PNP epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of -120 V and a maximum collector current of -800 mA. The device provides a DC current gain (hFE) ranging from 120 to 240 for the Y classification, with a transition frequency of 120 MHz at -100 mA. Power dissipation reaches 1000 mW, and it operates within a junction temperature range up to 150 °C.
Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm the specific hFE binning (O or Y) required for your circuit design against the datasheet specifications. Ensure component authenticity through authorized distribution channels to maintain reliability standards.
Select this component when designing complementary push-pull stages requiring a -120 V rating. The high transition frequency supports applications needing rapid signal transitions. Verify that the thermal management strategy accommodates the 1000 mW dissipation limit under continuous operating conditions.
This component belongs to Toshiba's general-purpose discrete semiconductor lineup. It utilizes the PCT process technology to achieve specific electrical characteristics suitable for audio and driver applications. The device is housed in a standard three-pin package designed for reliable mounting in electronic assemblies.
The 2SC3665 serves as the direct complementary NPN counterpart for matched pair applications. No other direct substitutes are documented in the official datasheet.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.