Single Bipolar Transistors 2SA1425-Y,T2F(J product image

2SA1425-Y,T2F(J

  • Description:TRANS PNP 120V 0.8A MSTM
  • Series:-

SKU:62270f7d75c0 Category: Brand:

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2SA1425-Y,T2F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.8A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1425-Y,T2F(J

  • Description:TRANS PNP 120V 0.8A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1425-Y,T2F(J

2SA1425-Y,T2F(J

Single Bipolar Transistors Overview

The Toshiba 2SA1425 is a silicon PNP epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of -120 V and a maximum collector current of -800 mA. The device provides a DC current gain (hFE) ranging from 120 to 240 for the Y classification, with a transition frequency of 120 MHz at -100 mA. Power dissipation reaches 1000 mW, and it operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Complementary pairing with the 2SC3665 NPN transistor
  • High-speed switching capability indicated by 120 MHz transition frequency
  • Robust power handling with 1000 mW collector power dissipation

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver-stage amplification

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations. Confirm the specific hFE binning (O or Y) required for your circuit design against the datasheet specifications. Ensure component authenticity through authorized distribution channels to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary push-pull stages requiring a -120 V rating. The high transition frequency supports applications needing rapid signal transitions. Verify that the thermal management strategy accommodates the 1000 mW dissipation limit under continuous operating conditions.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's general-purpose discrete semiconductor lineup. It utilizes the PCT process technology to achieve specific electrical characteristics suitable for audio and driver applications. The device is housed in a standard three-pin package designed for reliable mounting in electronic assemblies.

Single Bipolar Transistors Replacement Considerations

The 2SC3665 serves as the direct complementary NPN counterpart for matched pair applications. No other direct substitutes are documented in the official datasheet.

2SA1425-Y,T2F(J2SA1425-Y,T2F(J

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