2SA1428-O,T2CLAF(J

Single Bipolar Transistors Overview

The Toshiba 2SA1428 is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of −2 A and a collector-emitter voltage rating of −50 V. The device achieves a low collector-emitter saturation voltage of −0.5 V (max) at −1 A. Electrical characteristics include a transition frequency of 100 MHz typical, with switching times such as storage time at 1.0 μs typical. Power dissipation reaches 1000 mW, and the junction temperature limit is 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with defined transition frequencies
• Complementary pairing with the 2SC3668 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting Toshiba sales representatives, as markings indicate specific environmental compliance. Confirm hFE classification suffixes (O or Y) to ensure correct DC current gain ranges for your design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-speed PNP switching or amplification within a 50 V supply range. Ensure base drive currents are sufficient to maintain the specified low saturation voltage. Consider thermal management strategies to keep the junction temperature below 150 °C during continuous operation.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba discrete semiconductor transistor family. It utilizes the PCT process technology to achieve its specific electrical performance metrics. The device is designed for general electronics applications, including computers and office equipment, while excluding unintended uses in safety-critical systems.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3668 as the complementary NPN transistor. No other direct replacement part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is −50 V when measured at a collector current of −10 mA.

How does the hFE classification affect the component?

The 'O' suffix indicates a DC current gain range of 70 to 140, while the 'Y' suffix indicates a range of 120 to 240 under standard test conditions.

Is this component suitable for automotive use?

No. The document restricts use to general electronics and explicitly prohibits application in automobiles due to reliability and safety standards.