2SA1464-P-AP

Single Bipolar Transistors Overview

The 2SA1464-P-AP is a PNP silicon epitaxial transistor manufactured by Micro Commercial Components (MCC). It operates with a collector current of -0.5 A and collector power dissipation of 0.2 W. The device features a collector-emitter breakdown voltage of -40 V and a collector-base breakdown voltage of -60 V. DC current gain ranges from 75 to 150 at -150 mA, or 20 to 50 at -500 mA. The transition frequency reaches up to 400 MHz. It utilizes an SOT-23 package and supports junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• High transition frequency capability reaching 400 MHz for RF applications
• Epoxy material meets UL 94 V-0 flammability rating
• Lead-free finish compliant with RoHS standards
• Moisture sensitivity level 1 classification

Single Bipolar Transistors Applications

• RF amplifier circuits
• General-purpose switching applications
• Audio amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering to ensure compliance with environmental requirements. The standard part number includes lead-free plating. Halogen-free versions require adding the -HF suffix to the order code. Confirm availability through authorized distributors to guarantee genuine components and full traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-frequency performance in a compact surface-mount footprint. The P-type ranking offers a DC current gain range of 75 to 150, suitable for moderate gain requirements. Ensure thermal management accommodates the 0.2 W power dissipation limit within the specified operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1464 series of PNP silicon epitaxial transistors. The series includes variants with different gain rankings, specifically P, Q, and R types. These devices are designed for general-purpose use and share identical electrical ratings and physical dimensions, differing only in their hFE classification bands.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the 2SA1464-Q and 2SA1464-R variants. These parts share identical pinouts and maximum ratings but offer different DC current gain ranges. Verify that the alternative gain band meets the specific circuit requirements before substitution.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA1464-P variant?

The DC current gain (hFE) for the 2SA1464-P variant ranges from 75 to 150 when tested at a collector current of -150 mA and VCE of -2.0 V.

How can I obtain a halogen-free version of this transistor?

To obtain a halogen-free version, add the suffix '-HF' to the end of the part number, such as 2SA1464-P-TP-HF.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is -40 V.