2SA1469R-MBS-LA9-SY

Single Bipolar Transistors Overview

The Sanyo 2SA1469R-MBS-LA9-SY is a single PNP epitaxial planar silicon bipolar junction transistor designed for high-speed switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 60 V. The device operates with a transition frequency of 100 MHz and supports a power dissipation of 2 W in its TO-220ML flange mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a maximum operating junction temperature of 140 °C to 150 °C, ensuring reliable performance in through-hole mounting configurations.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power handling
• Excellent current dependence of hFE for stable amplification
• Short switching time optimized for high-speed operations

Single Bipolar Transistors Applications

• High-speed switching circuits
• Power amplifier stages
• General-purpose transistor applications requiring robust current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix LA9-SY against official Sanyo documentation to confirm packaging type and compliance status. Ensure the supplier provides valid traceability for the TO-220ML flange mount variant. Cross-reference the manufacturer's latest datasheet to confirm thermal characteristics and pinout alignment before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 5 A continuous current capability and 60 V breakdown voltage is required. The TO-220ML package facilitates effective heat dissipation for 2 W power loads. Consider the 100 MHz transition frequency for applications demanding rapid signal switching rather than low-frequency linear amplification.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1469 series of PNP/NPN epitaxial planar silicon transistors manufactured by Sanyo. The R-MBS-LA9-SY designation indicates specific packaging and handling variations within the broader product line, tailored for through-hole mounting and industrial-grade reliability standards.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 5 A/60V PNP specification and TO-220ML form factor. Verify equivalent hFE ranges and switching times. Consult Sanyo's obsolescence notices for alternative recommendations if this specific suffix is discontinued.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage is rated at 60 V.

Is the case connection isolated?

Yes, the datasheet specifies that the case connection is isolated.