2SA1518-TB-E

2SA1518-TB-E

$0.09
  • Description:TRANS PREBIAS PNP 50V
  • Series:*

SKU:580ca4642ee4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:-
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:-
  • Power - Max:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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2SA1518-TB-E

Overview

The 2SA1518-TB-E is a PNP epitaxial planar silicon transistor manufactured by onsemi. It is designed for general-purpose switching and amplification applications. The device features a maximum collector-emitter voltage of -50 V and a continuous collector current of -150 mA. It operates with a maximum power dissipation of 200 mW at 25°C ambient temperature. The component utilizes a CPA (SOT-23) surface-mount package, facilitating automated assembly in compact electronic designs.

Feature Summary

  • Utilizes an epitaxial planar silicon structure for reliable performance
  • Designed for low-voltage switching and amplification tasks
  • Compatible with standard surface-mount assembly processes

Applications

  • General-purpose signal switching circuits
  • Low-power amplifier stages
  • Battery-powered portable devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and environmental declarations directly from the product documentation before procurement. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and current production status.

Selection Notes

Select this component when a small-form-factor PNP transistor is required for low-current applications. Ensure the design accounts for the 200 mW power dissipation limit and thermal constraints associated with the CPA package. Verify that the -50 V breakdown voltage meets the circuit requirements.

Part Context

This component belongs to onsemi's portfolio of standard discrete bipolar junction transistors. It is part of the broader family of surface-mount PNP devices intended for consumer electronics and industrial control systems where space efficiency and cost-effectiveness are prioritized over high-power handling capabilities.

Replacement Considerations

Consult the manufacturer's cross-reference guide for verified equivalent parts. Ensure any substitute matches the CPA package outline and electrical characteristics such as hFE and VCEO.

2SA1518-TB-E2SA1518-TB-E
$0.09
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