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The 2SA1518-TB-E is a PNP epitaxial planar silicon transistor manufactured by onsemi. It is designed for general-purpose switching and amplification applications. The device features a maximum collector-emitter voltage of -50 V and a continuous collector current of -150 mA. It operates with a maximum power dissipation of 200 mW at 25°C ambient temperature. The component utilizes a CPA (SOT-23) surface-mount package, facilitating automated assembly in compact electronic designs.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and environmental declarations directly from the product documentation before procurement. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and current production status.
Select this component when a small-form-factor PNP transistor is required for low-current applications. Ensure the design accounts for the 200 mW power dissipation limit and thermal constraints associated with the CPA package. Verify that the -50 V breakdown voltage meets the circuit requirements.
This component belongs to onsemi's portfolio of standard discrete bipolar junction transistors. It is part of the broader family of surface-mount PNP devices intended for consumer electronics and industrial control systems where space efficiency and cost-effectiveness are prioritized over high-power handling capabilities.
Consult the manufacturer's cross-reference guide for verified equivalent parts. Ensure any substitute matches the CPA package outline and electrical characteristics such as hFE and VCEO.