2SA1525

2SA1525

$0.09
  • Description:SMALL SIGNAL BIPOLAR TRANS PNP
  • Series:-

SKU:70961baff745 Category: Brand:

  
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Product Detailed Parameters

  • Description:SMALL SIGNAL BIPOLAR TRANS PNP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:300 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:3-SSIP
  • Supplier Device Package:3-SPA

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2SA1525

Overview

The onsemi 2SA1525 is a high-voltage PNP silicon epitaxial planar transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 300V and a continuous collector current capability of 0.5A. The device utilizes a TO-92 plastic package, providing a compact form factor suitable for space-constrained designs. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 200 at IC=10mA, ensuring reliable performance across various operating conditions. The transistor is engineered for low saturation voltage and fast switching speeds, making it appropriate for use in power supply circuits, relay drivers, and general analog signal processing tasks where high voltage tolerance is required.

Feature Summary

  • High voltage tolerance with a 300V collector-emitter breakdown capability
  • Compact TO-92 plastic package for efficient board space utilization
  • Optimized for low saturation voltage to improve efficiency in switching applications

Applications

  • General-purpose switching circuits
  • Relay driver stages
  • Power supply output regulation

Procurement Notes

Verify the specific ordering suffix to confirm the exact tape and reel or bulk packaging configuration, as this affects handling procedures. Ensure the component date code aligns with project requirements for long-term reliability. Cross-reference the manufacturer's latest datasheet revision to confirm pinout consistency and thermal resistance values before finalizing the bill of materials.

Selection Notes

Select this component when circuit design demands a PNP transistor capable of handling high voltages up to 300V with moderate current levels around 500mA. Consider the TO-92 package constraints regarding thermal dissipation capabilities compared to larger packages. Evaluate the hFE range requirements against the base drive circuitry to ensure adequate gain margins are maintained under worst-case temperature variations.

Part Context

This transistor belongs to the broader category of discrete bipolar junction transistors manufactured by onsemi. It serves as a standard replacement for legacy PNP devices in industrial and consumer electronics. The component is part of a family of high-voltage transistors designed to meet stringent automotive and industrial reliability standards while maintaining cost-effectiveness for mass production environments.

Replacement Considerations

Direct substitutes may include other 300V PNP transistors in TO-92 packages such as the 2SA1015 series variants, provided pin compatibility and electrical ratings match. Verify that alternative parts maintain equivalent saturation voltage and current gain specifications to ensure circuit performance parity without redesigning the bias network.

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