SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2SA1527-AA is a small signal PNP bipolar junction transistor manufactured using silicon epitaxial planar processes. It is housed in the TO-92 through-hole package, designed for compact circuit integration. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 0.5 A. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at a collector current of -10 mA and VCE of -1 V. The component operates within a junction temperature range of -55°C to +150°C and supports storage temperatures between -65°C and +150°C.
Verify the specific suffix designation when ordering, as it may indicate particular binning or testing criteria required by the design. Confirm RoHS compliance status and REACH SVHC declarations against current regulatory requirements before finalizing procurement specifications. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component for applications requiring a low-cost, general-purpose PNP switch with integrated biasing. The built-in resistor simplifies drive circuitry by reducing external component count. Verify that the 50V breakdown voltage and 0.5A current limits accommodate the peak operational loads without exceeding thermal dissipation constraints in the target enclosure.
This part belongs to the broader family of small signal bipolar transistors produced by onsemi. These devices are commonly utilized in consumer electronics and industrial control systems where reliable switching performance is necessary. The TO-92 form factor remains a standard choice for prototyping and high-volume manufacturing due to its compatibility with automated insertion equipment.
Direct substitutes must match the PNP configuration, TO-92 package, and integrated resistor ratio. Verify equivalent hFE ranges and voltage ratings to ensure functional parity in existing designs.