2SA1618-GR(TE85L,F

Overview

The 2SA1618-GR(TE85L,F is a dual PNP bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It features a matched pair configuration within an SOT-25 (SMV) surface-mount package. The device supports a collector-emitter voltage of -50 V and a continuous collector current of -0.15 A. Key electrical characteristics include a transition frequency of 80 MHz and a maximum power dissipation of 300 mW. This component utilizes silicon epitaxial technology for reliable general-purpose switching and amplification applications.

Feature Summary

• Dual PNP matched pair configuration for common emitter applications
• Surface-mount SMV package design for compact circuit integration
• Silicon epitaxial construction ensuring stable operational performance

Applications

• General-purpose signal amplification circuits
• Switching applications in consumer electronics
• RF signal processing stages requiring matched pairs

Procurement Notes

Verify the specific ordering code suffix to ensure correct packaging and binning specifications. Confirm that the received components match the manufacturer's datasheet parameters for voltage, current, and frequency ratings before integration into final assemblies.

Selection Notes

Select this component when a dual PNP matched pair is required in a small surface-mount footprint. Ensure the application voltage does not exceed 50 V and current limits remain within 150 mA. Consider thermal management requirements given the 300 mW power dissipation limit in the SMV package.

Part Context

This part belongs to Toshiba's discrete semiconductor product line focusing on bipolar transistors. It serves as a solution for applications needing two closely matched PNP transistors in a single package, offering advantages in space-constrained designs compared to discrete individual components.

Replacement Considerations

Direct substitutes may include other dual PNP arrays with similar voltage and current ratings in SOT-25 packages. Verify pin compatibility and electrical parameters such as hFE matching and transition frequency before substitution.