2SA1680(T6DNSO,F,M

Single Bipolar Transistors Overview

The Toshiba 2SA1680 is a PNP silicon epitaxial transistor manufactured using the PCT process, designed for power amplifier and switching applications. It features a JEDEC TO-92MOD package with a maximum collector current of -2 A and a collector-emitter voltage rating of -50 V. The device provides a low collector-emitter saturation voltage of -0.5 V at -1 A and supports high-speed switching with a typical storage time of 300 ns. Electrical characteristics include a transition frequency of 100 MHz and a DC current gain ranging from 40 to 400 depending on operating conditions.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient conduction
• High-speed switching capability with short storage times
• High transition frequency suitable for audio and general amplification

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate potential variations. Confirm package integrity upon receipt, as the TO-92MOD form factor requires specific mounting considerations. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy loads or extreme temperature conditions before finalizing design integration.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a complementary match to the 2SC4408 NPN transistor. Evaluate thermal management requirements carefully, as the junction temperature limit is 150 °C and continuous dissipation is rated at 900 mW. Ensure base drive currents remain within the specified limits to maintain optimal saturation performance and switching speeds in the target circuit topology.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of PNP epitaxial transistors utilizing the PCT process technology. It serves as a specialized alternative for discrete power stages where low saturation voltage and moderate current handling are critical. The component is distinct from higher-power flange-mount variants and is optimized for compact surface-mount or through-hole implementations in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4408 as the complementary N-channel counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The absolute maximum rating for collector-emitter voltage (VCEO) is -50 V.

Is this transistor suitable for high-frequency RF applications?

While it has a transition frequency of 100 MHz, it is primarily designated for power amplifier and switching applications rather than dedicated RF front-end stages.

How does the DC current gain vary with collector current?

The minimum DC current gain (hFE) is specified as 120 at a collector current of -100 mA, and drops to a minimum of 40 at a higher collector current of -1.5 A.