2SA1680,T6F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1680,T6F(J) is a PNP silicon epitaxial transistor manufactured using the PCT process. It features a maximum collector current of -2 A, a collector-emitter breakdown voltage of -50 V, and a collector power dissipation of 900 mW at 25 °C. The device exhibits a low collector-emitter saturation voltage of -0.5 V (max) at -1 A and a high-speed storage time of 300 ns (typ.). Electrical characteristics include a DC current gain range of 40 to 400 and a transition frequency of 100 MHz (typ.).

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching.
• High-speed switching capability with short storage times.
• High collector power dissipation rating.
• Complementary pairing with the 2SC4408 NPN transistor.

Single Bipolar Transistors Applications

• Power amplifier applications
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the JEDEC TO-92MOD package matches the required footprint. Ensure design parameters remain within absolute maximum ratings to maintain reliability. Consult the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy loads or temperature variations.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high current handling and fast switching speeds. The low saturation voltage minimizes power loss during conduction. Verify thermal management requirements due to the 900 mW dissipation limit in the TO-92MOD package. Consider the complementary 2SC4408 if a matched pair is needed for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba PNP silicon epitaxial transistor family utilizing the PCT process technology. It is designed for general-purpose power amplification and switching tasks. The device is housed in a JEDEC TO-92MOD plastic encapsulated package with three leads.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC4408 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SA1680?

The typical transition frequency (fT) is 100 MHz when measured at VCE = -2 V and IC = -100 mA.

Is the 2SA1680 suitable for aerospace or medical equipment?

No. The product restrictions explicitly state it is not intended for use in equipment requiring extraordinarily high reliability, such as aerospace, medical, or nuclear facilities.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is -60 V.