2SA1727TLP

Single Bipolar Transistors Overview

The 2SA1727TLP is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 400 V and a maximum DC collector current (IC) of 500 mA. The device has a power dissipation rating of 1 W at 25°C ambient temperature. Key electrical parameters include a DC current gain (hFE) ranging from 120 to 360, a transition frequency (fT) of 12 MHz minimum, and an emitter-base breakdown voltage (VEBO) of 7 V. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 400 V collector-emitter breakdown
• Suitable for high-voltage switching applications in general-purpose circuits
• Robust thermal performance supporting up to 150°C junction temperature

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General-purpose amplification
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TLQ' or 'TLP' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and REACH SVHC declarations directly from the latest datasheet revision. Ensure the component lifecycle status is reviewed, as availability may be restricted based on production schedules.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling capabilities exceeding standard low-voltage transistors. The 400 V rating makes it appropriate for flyback transformer drivers and high-side switching applications. Consider the 500 mA current limit and 1 W power dissipation constraints during thermal management planning to ensure reliable operation under load conditions.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of high-voltage PNP bipolar junction transistors designed for robust performance in demanding environments. It utilizes silicon epitaxial planar technology to achieve high breakdown voltages while maintaining stable current gain characteristics. The device is intended for use in consumer electronics and industrial equipment where high voltage isolation and switching efficiency are required.

Single Bipolar Transistors Replacement Considerations

Consult the official ROHM replacement guide for verified equivalents. Cross-reference key parameters such as VCEO, IC, and package type when evaluating alternative components to ensure circuit compatibility.